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Unbiased High Accelerate d Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliabilit y Report
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06-12-2012 12:31 PM
Re: Unbiased High Accelerate d Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliabilit y Report
[ Edited ]
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06-12-2012 01:11 PM - edited 06-12-2012 01:12 PM
j,
Is there a question?
http://www.xilinx.com/support/documentation/user_g
The reliability report is issued every quarter.
What is it that has you concerned?
Principal Engineer
Xilinx San Jose
Re: Unbiased High Accelerate d Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliabilit y Report
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06-13-2012 07:14 AM
Yes, I'm trying to find out what activation energy was used, and what temperature 110C or 130 C was used for the XC6s. I would like to get this info to translate the 44,066 hours for the unbiased test to an different temperature. I know for the HTOL test an activation energy of 0.7eV was used for the HTOL test, but this activation energy it not specified for the unbiased test and is probably a different value. Also on page 55 , the unbiased test lists both temperatures , so the temperature for the XC6s is one or the other. I would like to find out which.
Re: Unbiased High Accelerate d Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliabilit y Report
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06-13-2012 07:28 AM
j,
OK, I will get the answer and get back to you.
Generally, you may request this information from your Xilinx FAE, or Xilinx distributor: they will know how to find it, and get back to you very quickly.
Principal Engineer
Xilinx San Jose
Re: Unbiased High Accelerate d Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliabilit y Report
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06-13-2012 10:05 AM
Thanks, I appreciate the help and quick response.
Re: Unbiased High Accelerate d Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliabilit y Report
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06-13-2012 01:42 PM
per JEC122, and 0.7 eV
Hope that answers your questions.
Principal Engineer
Xilinx San Jose
Re: Unbiased High Accelerate d Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliabilit y Report
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06-13-2012 02:00 PM
And,
130 C
Principal Engineer
Xilinx San Jose
Re: Unbiased High Accelerate d Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliabilit y Report
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06-18-2012 07:35 AM











