Here’s a photo of the resulting system including the QDESYS power-inverter carrier card, the Avnet MicroZed SOM, and an ISM Networking FMC Module.
SiC MOSFETs can switch higher voltages and currents at higher temperatures (175°C), have a larger band-gap and high voltage breakdown (1200V), and exhibit fast switching capabilities that can deliver better performance for power inverters when compared to IGBTs. The 3-level power inverter design mitigates motor-control issues caused by long power cables between the controller and the motor or load by employing smaller voltage steps. The smaller voltage steps also reduce voltage surges and curb rise times at the motor terminals. The waveform output is cleaner because the effective switching frequency of a 3-level power inverter is twice the actual switching frequency. Here’s a comparison of the two waveforms for illustration:
For more information about the QDESYS SiC power inverter and motor controller, click here. For a complete presentation about this technology, click here.