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Visitor
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Registered: ‎06-12-2012

Unbiased High Accelerated Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliability Report

 
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Scholar
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Registered: ‎02-27-2008

Re: Unbiased High Accelerated Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliability Report

j,

 

Is there a question?

 

http://www.xilinx.com/support/documentation/user_guides/ug116.pdf

 

The reliability report is issued every quarter.

 

What is it that has you concerned?

 

 

 

Austin Lesea
Principal Engineer
Xilinx San Jose
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Visitor
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Registered: ‎06-12-2012

Re: Unbiased High Accelerated Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliability Report

Yes, I'm trying to find out what activation energy was used, and what temperature 110C or 130 C was used for the XC6s. I would like to get this info to translate the 44,066 hours for the unbiased test to an different temperature. I know for the HTOL test an activation energy of 0.7eV was used for the HTOL test, but this activation energy it not specified for the unbiased test and is probably a different value. Also on page 55 , the unbiased test lists both temperatures , so the temperature for the XC6s is one or the other. I would like to find out which.

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Scholar
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Registered: ‎02-27-2008

Re: Unbiased High Accelerated Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliability Report

j,

 

OK, I will get the answer and get back to you.


Generally, you may request this information from your Xilinx FAE, or Xilinx distributor:  they will know how to find it, and get back to you very quickly.

 

 

Austin Lesea
Principal Engineer
Xilinx San Jose
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Registered: ‎06-12-2012

Re: Unbiased High Accelerated Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliability Report

Thanks, I appreciate the help and quick response.

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Scholar
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Registered: ‎02-27-2008

Re: Unbiased High Accelerated Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliability Report

per JEC122, and 0.7 eV

 

Hope that answers your questions.

 

 

 

 

Austin Lesea
Principal Engineer
Xilinx San Jose
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Scholar
Scholar
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Registered: ‎02-27-2008

Re: Unbiased High Accelerated Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliability Report

And,

 

130 C

 

 

Austin Lesea
Principal Engineer
Xilinx San Jose
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Registered: ‎06-12-2012

Re: Unbiased High Accelerated Stress Test, Activation energy and Temp used for XC6Sxxx on pg 52, Table 2-106 of the Device Reliability Report

Thanks for you help Austin
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